EPITAXIAL-GROWTH OF (001)-ORIENTED AND (110)-ORIENTED SRBI2TA2O9 THIN-FILMS

Epitaxial SrBi2Ta2O9 thin films have been grown with (001) and (110) o rientations by pulsed laser deposition on (001) LaAlO3-Sr2AlTaO6 and ( 100) LaSrAlO4 substrates, respectively. Four-circle 2 4 x-ray diffract ion and transmission electron microscopy reveal nearly phase pure epit axial films. Minimization of surface mesh mismatch between the film an d substrate (i.e., choice of appropriate substrate material and orient ation) was used to stabilize the desired orientations and achieve epit axial growth. (C) 1998 American Institute of Physics. [S0003-6951(98)0 2746-6].