PHOTOLUMINESCENCE OF GAN - EFFECT OF ELECTRON-IRRADIATION

The effect of electron irradiation on the optical properties of GaN ma terial with various electrical conductivity (i.e., n type, compensated , and p type) is studied in detail by photoluminescence (PL) spectrosc opy. Electron irradiation with a dose <10(17) cm(-2) is found to have a minor effect on photoluminescence, indicating a high radiation resis tance of GaN. For higher doses, two major effects of electron irradiat ion on PL properties can be distinguished, i.e., radiation- induced qu enching of the PL, likely caused by a radiation- induced formation of competing recombination channels, and radiation- induced formation/act ivation of new optically active centers. (C) 1998 American Institute o f Physics. [S0003-6951(98)02246-3].