40 GBIT S 1.55 MU-M PIN-HEMT PHOTORECEIVER MONOLITHICALLY INTEGRATED ON 3IN GAAS SUBSTRATE/

Authors
HURM V BENZ W BRONNER W HULSMANN A JAKOBUS T KOHLER K LEVEN A LUDWIG M RAYNOR B ROSENZWEIG J SCHLECHTWEG M THIEDE A
Citation
V. Hurm et al., 40 GBIT S 1.55 MU-M PIN-HEMT PHOTORECEIVER MONOLITHICALLY INTEGRATED ON 3IN GAAS SUBSTRATE/, Electronics Letters, 34(21), 1998, pp. 2060-2062
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
21
Year of publication
1998
Pages
2060 - 2062
Database
ISI
SICI code
0013-5194(1998)34:21<2060:4GS1MP>2.0.ZU;2-J
Abstract
A 36.5GHz bandwidth, 1.55 mu m wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3in Ga As substrate using a 0.15 mu m gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34A/W. Clearly-opened eye diagrams for a 40Gbit/s optical data stream have been demonstrated.