SUPPRESSED THRESHOLD VOLTAGE ROLL-OFF CHARACTERISTIC OF 40NM GATE LENGTH ULTRATHIN SOI MOSFET

Authors
ISHII K SUZUKI E KANEMARU S MAEDA T NAGAI K SEKIGAWA T
Citation
K. Ishii et al., SUPPRESSED THRESHOLD VOLTAGE ROLL-OFF CHARACTERISTIC OF 40NM GATE LENGTH ULTRATHIN SOI MOSFET, Electronics Letters, 34(21), 1998, pp. 2069-2070
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
21
Year of publication
1998
Pages
2069 - 2070
Database
ISI
SICI code
0013-5194(1998)34:21<2069:STVRCO>2.0.ZU;2-R
Abstract
The authors have experimentally demonstrated a highly suppressed thres hold voltage roll-off characteristic of a 40nm gate length ultrathin ( 11nm) silicon-on-insulator n-MOSFET. It is observed that Delta V-th is only 0.2V when compared with a long gate length (150nm) device. The m arked effectiveness of an ultrathin SOI channel is experimentally conf irmed to suppress the short. channel effect.