ELECTRICAL-PROPERTIES OF SEMICONDUCTING GLASS

A special semiconducting glass has been developed to be used as basepl ates for the construction of Micro-Strip-Gas Chamber detectors, where it is necessary to combine adequate insulating properties with the pos sibility to drain the electric charge being built up by ionizing radia tion. The composition of the glass together with two other samples of Moscow glass and of Schott S8900 glass is given. Resistivity and its t emperature dependence have been measured to determine the activation e nergy. The carrier mobility and conduction type have been estimated by the Hall effect measurement according to van Heck's method. A linear dependence of carrier mobility on activation energy was found, but Mey er-Neldel's rule was not well fulfilled. The p-type conduction was det ermined by comparison with the Hall effect of a silicon sample of know n conduction type. (C) 1998 Elsevier Science B.V. All rights reserved.