XPS STUDY OF PLASMA-TREATED CARBON LAYERS DEPOSITED ON POROUS SILICON

Authors
BESHKOV G KRASTEV V VELCHEV N MARINOVA T
Citation
G. Beshkov et al., XPS STUDY OF PLASMA-TREATED CARBON LAYERS DEPOSITED ON POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 1-4
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
56
Issue
1
Year of publication
1998
Pages
1 - 4
Database
ISI
SICI code
0921-5107(1998)56:1<1:XSOPCL>2.0.ZU;2-5
Abstract
A carbon film deposited on porous silicon in nitrogen plasma has been investigated by XPS. The presence of different carbon-nitrogen bonds i n the whole carbonitride layer has been established. Irrespective of t he low percentage of nitrogen (about 6%), it is found to participate i n cyanide groups, bonds characteristic of beta-C3N4 as well as in C-N and C=N bonds. (C) 1998 Elsevier Science S.A. All rights reserved.