THERMAL-OXIDATION OF CLEFT SURFACE OF INSE SINGLE-CRYSTAL

The thermal oxidation processes of cleft surface of InSe single crysta ls in the temperature range from 200 to 615 degrees C have been invest igated. We used the cathodoluminescence and X-ray diffraction methods. We established that adsorption processes were activated and defect cr eation on the cleft InSe surface begun at the low temperatures. The fo rmation of In2Se3 and In-2(SeO4)(3) phases took place at medium temper atures. In2O3 phase was formed at high temperatures. Results are in go od agreement with the In-Se-O phase diagram that generally includes th e In-2(SeO4)(3) phase formation. (C) 1998 Elsevier Science S.A. All ri ghts reserved.