LOW-TEMPERATURE STM ON INAS(110) ACCUMULATION SURFACES

Authors
CANALI L WILDOER JWG KERKHOF O KOUWENHOVEN LP
Citation
L. Canali et al., LOW-TEMPERATURE STM ON INAS(110) ACCUMULATION SURFACES, Applied physics A: Materials science & processing, 66, 1998, pp. 113-116
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
1
Supplement
S
Pages
113 - 116
Database
ISI
SICI code
0947-8396(1998)66:<113:LSOIAS>2.0.ZU;2-8
Abstract
The properties of InAs(110) surfaces have been investigated by means o f low-temperature scanning tunneling microscopy and spectroscopy. A te chnique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measureme nts in high magnetic field demonstrate Landau quantization of the ener gy spectrum, both in the 2D subbands and in the 3D bulk conduction ban d.