A. Depuydt et al., INFLUENCE OF RESONANT-TUNNELING ON THE IMAGING OF ATOMIC DEFECTS ON INAS(110) SURFACES BY LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY, Applied physics A: Materials science & processing, 66, 1998, pp. 171-174
We have used a low-temperature scanning tunneling microscope (STM) to
study the surface of heavily doped semiconductor InAs crystals. The cr
ystals are cleaved in situ along the (110) plane. Apart from atomicall
y flat areas, we also observe two major types of atomic-scale defects
which can be identified as S dopant atoms and As vacancies, respective
ly. The strong bias voltage dependence of the STM image of the impurit
ies can be explained in terms of resonant tunneling through localized
states which are present near the impurity.