INFLUENCE OF RESONANT-TUNNELING ON THE IMAGING OF ATOMIC DEFECTS ON INAS(110) SURFACES BY LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY

Citation
A. Depuydt et al., INFLUENCE OF RESONANT-TUNNELING ON THE IMAGING OF ATOMIC DEFECTS ON INAS(110) SURFACES BY LOW-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY, Applied physics A: Materials science & processing, 66, 1998, pp. 171-174
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
1
Supplement
S
Pages
171 - 174
Database
ISI
SICI code
0947-8396(1998)66:<171:IOROTI>2.0.ZU;2-Y
Abstract
We have used a low-temperature scanning tunneling microscope (STM) to study the surface of heavily doped semiconductor InAs crystals. The cr ystals are cleaved in situ along the (110) plane. Apart from atomicall y flat areas, we also observe two major types of atomic-scale defects which can be identified as S dopant atoms and As vacancies, respective ly. The strong bias voltage dependence of the STM image of the impurit ies can be explained in terms of resonant tunneling through localized states which are present near the impurity.