Scanning tunneling microscopy (STM) obtains information about an objec
t via tunnel channels, which severely reduce the spectroscopic and spa
tial information. Hence, as the first quantification step in STM, the
tunnel channels must be identified. This is performed by distance and
voltage tunnel spectroscopy (DTS/VTS), showing specific I(d) and I(V)
dependencies if n = 0, 1, 2,..., n intermediate states are involved. E
xamples of this I(d) proportional to exp(-2kd/(n + 1)) analysis, with
tunnel distance d and decay length k = root 2m phi/(h) over bar approx
imate to 5.1/nm for a tunnel with barrier height phi approximate to 1
eV are given for surfaces covered by water, air or vacuum. Despite the
n = 1, 2, 3 intermediate states and their charging, imaging down to a
tomic resolution is achieved. Because of the enhanced tunnel probabili
ty for intermediate states (i.e. reduced tunnel resistance allowing br
idging distances between 0.5 and 25 nm), those resonant tunnel process
es are of crucial importance for any ''real system''.