INVESTIGATIONS OF THE FINE-STRUCTURE OF I(V) CHARACTERISTICS FOR HIGHLY ORIENTED PYROLITIC GRAPHITE SURFACE BY MEANS OF STM STS AT ROOM-TEMPERATURE/

Authors
OLEJNICZAK W KLUSEK Z BIENIECKI M
Citation
W. Olejniczak et al., INVESTIGATIONS OF THE FINE-STRUCTURE OF I(V) CHARACTERISTICS FOR HIGHLY ORIENTED PYROLITIC GRAPHITE SURFACE BY MEANS OF STM STS AT ROOM-TEMPERATURE/, Applied physics A: Materials science & processing, 66, 1998, pp. 191-196
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
1
Supplement
S
Pages
191 - 196
Database
ISI
SICI code
0947-8396(1998)66:<191:IOTFOI>2.0.ZU;2-L
Abstract
A comprehensive room-temperature study of the electron tunneling in th e STM junction between a tungsten tip and a highly oriented pyrolitic graphite surface is presented. The conductance versus voltage dependen cies dI/dV(V) obtained by numerical filtration and differentiation of the direct measured current - voltage characteristics I(V) have a numb er of narrow resistive peaks at the bias voltages located near the cor responding tungsten and HOPG phonon frequencies. The plotted histogram s of the frequency distribution of the global minimum in dI/dV(V) curv es enable us to draw a conclusion on the phonon origin of this fine st ructure. A model that could qualitatively explain the observed data is discussed.