H. Sugimura et N. Nakagiri, FORCE MICROSCOPY IMAGING OF PHOTOPATTERNED ORGANOSILANE MONOLAYERS - APPLICATION TO PROBE ALIGNMENT IN AFM PATTERNING FOLLOWING PHOTOLITHOGRAPHY, Applied physics A: Materials science & processing, 66, 1998, pp. 427-430
Photomask patterns were transferred to a self-assembled organosilane m
onolayer by vacuum ultraviolet irradiation through the photochemical d
egradation of the monolayer in the irradiated area. The monolayer was
thus demonstrated to serve as a photoresist. The photofabricated patte
rns on the monolayer resists were observed by atomic force microscopy
(AFM) in various imaging modes. Without developing the exposed monolay
er resist, the patterns that is, the latent images - were clearly imag
ed by lateral force microscopy in contact AFM mode or phase contrast i
maging in intermittent contact AFM mode, based on the differences in c
hemical properties between the degraded and undegraded monolayer regio
ns. The photodegraded region showed stronger adhesive force than the u
nirradiated region. In addition, the latent image on the monolayer res
ist could be imaged by force modulation microscopy because of the diff
erences in mechanical properties between the photoirradiated and unirr
adiated monolayer regions. Using such force microscopy images, an AFM
probe was accurately aligned to a specific location on the photoprinte
d pattern in order to draw an additional pattern by AFM lithography.