THE STABILITY OF NANOSTRUCTURES FABRICATED ON SI(111)-7X7 SURFACE

Citation
Jn. Gao et al., THE STABILITY OF NANOSTRUCTURES FABRICATED ON SI(111)-7X7 SURFACE, Applied physics A: Materials science & processing, 66, 1998, pp. 783-786
Citations number
15
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
2
Supplement
S
Pages
783 - 786
Database
ISI
SICI code
0947-8396(1998)66:<783:TSONFO>2.0.ZU;2-2
Abstract
The stability of nanometer- or atomic-scale structures will affect the quality of nanometer-scale devices significantly. In these experiment s, an ultrahigh vacuum scanning tunneling microscope was used to fabri cate nanometer or atomic structures and to observe the stability of th ese structures. Three typical movements of the atoms in fabricated str uctures were observed: (1) atom diffusion; (2) atoms transferring to t he hole site closing in on an intact unit cell; (3) atoms belonging to a defective unit cell diffused to another defective unit cell. In the se movements, the diffusion of atoms had a tendency to recuperate the integrity of the unit cell at all time. The naturally formed monoatomi c step and the fabricated bridge structure were studied. It was conclu ded that the structure maintaining the integrity of the 7 x 7 unit cel l was stable.