STRAIN-INDUCED FORMATION OF SELF-ASSEMBLED NANOSTRUCTURES IN THE EPITAXIAL-GROWTH OF INAS AND GAAS ON INP(001)

Authors
ROBACH Y PHANER M SOLERE A GENDRY M PORTE L
Citation
Y. Robach et al., STRAIN-INDUCED FORMATION OF SELF-ASSEMBLED NANOSTRUCTURES IN THE EPITAXIAL-GROWTH OF INAS AND GAAS ON INP(001), Applied physics A: Materials science & processing, 66, 1998, pp. 1031-1034
Citations number
26
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
2
Supplement
S
Pages
1031 - 1034
Database
ISI
SICI code
0947-8396(1998)66:<1031:SFOSNI>2.0.ZU;2-2
Abstract
The evolution of surface morphology in epitaxial InAs and GaAs straine d layers grown on InP(001) was investigated by scanning tunneling micr oscopy. For compressive InAs layers, well-defined nanowires were forme d at the onset of the 2D/3D growth mode transition. These wires have b ase width and height distributions peaked at around 230 Angstrom and 2 0 Angstrom, respectively. The sharp 2D/3D transition is associated wit h a large reorganization of matter. In contrast, for tensile GaAs laye rs the growth mode is characterized by a gradual roughening process.