STM STUDY OF EPITAXIAL DY SILICIDES ON SI(111) AND SI(001) USING ULTRA-SHARP TIPS PREPARED BY ION-BOMBARDMENT

Authors
KALKA T PREINESBERGER C VANDRE S DAHNEPRIETSCH M
Citation
T. Kalka et al., STM STUDY OF EPITAXIAL DY SILICIDES ON SI(111) AND SI(001) USING ULTRA-SHARP TIPS PREPARED BY ION-BOMBARDMENT, Applied physics A: Materials science & processing, 66, 1998, pp. 1073-1075
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
2
Supplement
S
Pages
1073 - 1075
Database
ISI
SICI code
0947-8396(1998)66:<1073:SSOEDS>2.0.ZU;2-8
Abstract
We present an STM study on the epitaxial growth of Dy silicides on Si surfaces, using ultra-sharp tips prepared by ion bombardment. On Si(11 1), 100 Angstrom wide flat surfaces are observed, which form screw dis locations at thicker coverages. On Si(001), rectangular silicide islan ds are formed.