H. Ogiso et al., LATTICE DISORDER AND DENSITY-OF-STATES CHANGE OF GRAPHITE SURFACE BY SINGLE-ION IMPACT, Applied physics A: Materials science & processing, 66, 1998, pp. 1155-1158
We discuss changes in the electronic structure and the topography of t
he graphite surface caused by a single ion impact. Both protrusion-lik
e regions (PLR) and the lattice-disordered regions were found in scann
ing tunneling microscope images. In atomic force images, however, no P
LRs were found, even in when lattice-disordered regions were found. To
determine the change in the density of states in PLRs, tunneling curr
ent versus voltage characteristics were measured. It was found that th
e density of states at the Fermi level of PLRs was greater than that o
f the intact surface, which means that the semimetal to metal transiti
on was caused by a single ion impact. These results indicate that PLRs
may originate from the change in the density of states.