LATTICE DISORDER AND DENSITY-OF-STATES CHANGE OF GRAPHITE SURFACE BY SINGLE-ION IMPACT

Citation
H. Ogiso et al., LATTICE DISORDER AND DENSITY-OF-STATES CHANGE OF GRAPHITE SURFACE BY SINGLE-ION IMPACT, Applied physics A: Materials science & processing, 66, 1998, pp. 1155-1158
Citations number
16
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
2
Supplement
S
Pages
1155 - 1158
Database
ISI
SICI code
0947-8396(1998)66:<1155:LDADCO>2.0.ZU;2-J
Abstract
We discuss changes in the electronic structure and the topography of t he graphite surface caused by a single ion impact. Both protrusion-lik e regions (PLR) and the lattice-disordered regions were found in scann ing tunneling microscope images. In atomic force images, however, no P LRs were found, even in when lattice-disordered regions were found. To determine the change in the density of states in PLRs, tunneling curr ent versus voltage characteristics were measured. It was found that th e density of states at the Fermi level of PLRs was greater than that o f the intact surface, which means that the semimetal to metal transiti on was caused by a single ion impact. These results indicate that PLRs may originate from the change in the density of states.