ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF SPUTTERED VANADIUM-OXIDE THIN-FILMS GROWN ON AL2O3 SUBSTRATE

Citation
A. Cricenti et al., ATOMIC-FORCE MICROSCOPY CHARACTERIZATION OF SPUTTERED VANADIUM-OXIDE THIN-FILMS GROWN ON AL2O3 SUBSTRATE, Applied physics A: Materials science & processing, 66, 1998, pp. 1175-1178
Citations number
13
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
66
Year of publication
1998
Part
2
Supplement
S
Pages
1175 - 1178
Database
ISI
SICI code
0947-8396(1998)66:<1175:AMCOSV>2.0.ZU;2-#
Abstract
Vanadium oxide (V2O5) thin films, which are good candidates for the re alization of gas detectors, have been grown on rough alumina substrate s and characterized by atomic force microscopy (AFM). The films were p repared by radiofrequency reactive sputtering, with different concentr ations of oxygen in the growth atmosphere; after deposition the sample s were thermally treated in order to get the best sensitivity to diffe rent gases. Because of the structures already present on the rough alu mina substrate, AFM showed large topographical variations (several hun dred nanometers) for V2O5 films grown on a rough alumina substrate. Fo r both thermally treated and untreated samples, the roughness increase s with increasing percentage of oxygen, but the sample with the best s ensing properties (15% of oxygen) shows a characteristic minimum. More over, we observe that the thermal treatment also produces a general de crease in roughness, which is especially marked in samples with a low percentage of oxygen. The sensor has been tested with NO2, and the bes t sensitivity was obtained for an operating temperature around 300 deg rees C.