PREPARATION OF INSB NANOCRYSTALS EMBEDDED IN SIO2 THIN-FILMS

InSb nanocrystals embedded in SiO2 thin films were prepared by rf magn etron cosputtering technique. The observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly In SiO2 matrices. InSb nanocrystals with different sizes can be obtained by ch anging the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t(1/3) rule s. X-ray photoelectron spectroscopy and X-ray diffraction were also ap plied to the analyses of the composite thin films.