APPLICATION OF ELECTRON-CYCLOTRON-RESONANCE ASSISTED PLASMA IN GAN DEPOSITION

Authors
CHEN GC DU XL JIANG DY YAO XZ
Citation
Gc. Chen et al., APPLICATION OF ELECTRON-CYCLOTRON-RESONANCE ASSISTED PLASMA IN GAN DEPOSITION, Chinese Physics Letters, 15(10), 1998, pp. 761-763
Citations number
12
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
15
Issue
10
Year of publication
1998
Pages
761 - 763
Database
ISI
SICI code
0256-307X(1998)15:10<761:AOEAPI>2.0.ZU;2-6
Abstract
An electron cyclotron resonance assisted plasma with N-2 being the pla sma source gas was employed to deposit hexagonal GaN on (0001) surface of alpha-Al2O3 substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10x10 mm uniform GaN film was gai ned with relatively low deposition temperature, 560 degrees C, and hig h growth rate of 1.4 mu m/h. A good crystal microstructure was confirm ed by its spectrum with full width at half maximum of 15 arcmin.