EPITAXIAL PB(ZR0.52TI0.48)O-3 Y1BA2CU3O7-X HETEROSTRUCTURE PREPARED BY PULSED-LASER DEPOSITION/

C-axis oriented Y1Ba2Cu3O7-x (YBCO) thin films and PbZr0.52 Ti0.48O3 ( PZT)/(YBCO) heterostructures were deposited on single-crystal LaAlO3 b y Nd:YAG pulsed laser deposition. The results showed that the YBCO fil ms exhibited superconducting transition temperature above 86 K and ion beam channeling minimum yields chi(min) of 49%, indicating the relati vely good quality of YBCO films deposited on the LaAlO3 substrate. The PZT films in situ grown on the YBCO films were epitaxially c-axis ori ented with a saturation polarization and remanence as high as 57 mu C/ cm(2) and 39 mu C/cm(2) (at 204kV/cm), respectively. The coercive fiel d of PZT films is about 55 kV/cm.