EPITAXIAL THIN-FILM GROWTH OF LANTHANUM AND NEODYMIUM-ALUMINATE FILMSON FOIL-TEXTURED NICKEL USING A SOL-GEL METHOD

Citation
Ss. Shoup et al., EPITAXIAL THIN-FILM GROWTH OF LANTHANUM AND NEODYMIUM-ALUMINATE FILMSON FOIL-TEXTURED NICKEL USING A SOL-GEL METHOD, Journal of the American Ceramic Society, 81(11), 1998, pp. 3019-3021
Citations number
10
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00027820
Volume
81
Issue
11
Year of publication
1998
Pages
3019 - 3021
Database
ISI
SICI code
0002-7820(1998)81:11<3019:ETGOLA>2.0.ZU;2-4
Abstract
As part of an effort to develop a new, non-vacuum-processed substrate for high current superconducting films, thin films of LaAlO3 and NdAlO 3 were deposited on biaxially textured (100) nickel substrates using a solution deposition technique. On heating to 1150 degrees C in Ar-4% H-2 for 1 h, epitaxial films were obtained. Out-of-plane alignment was confirmed by obtaining rocking curves of the (002) plane of the LaAlO 3 (full width at half-maximum (fwhm) = 7.2 degrees) and the NdAlO3 (fw hm = 5.8 degrees) films, Inplane alignment was demonstrated by obtaini ng phi scans of the (110) plane of the LaAlO3 (fwhm = 13.4 degrees) an d the NdAlO3 (fwhm = 8.8 degrees) films. Grain alignment in the films is approximately equivalent to the alignment of the Ni substrate. Anal ysis of pole figures indicated that in both films there are two in-pla ne orientations present, the major being (001)[100] and the minor (001 )[110].