COBALT-PALLADIUM AND COBALT-PLATINUM BILAYER FILMS FORMED BY CHEMICAL-VAPOR-DEPOSITION

Citation
Swk. Choi et Rj. Puddephatt, COBALT-PALLADIUM AND COBALT-PLATINUM BILAYER FILMS FORMED BY CHEMICAL-VAPOR-DEPOSITION, Chemistry of materials, 9(5), 1997, pp. 1191-1195
Citations number
39
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
ISSN journal
08974756
Volume
9
Issue
5
Year of publication
1997
Pages
1191 - 1195
Database
ISI
SICI code
0897-4756(1997)9:5<1191:CACBFF>2.0.ZU;2-L
Abstract
The complexes [Co-3(CO)(9)CCl], [Co-3(CO)(9)CH], [Co-2(CO)(6)(HC=CPh)] and [Co-2(CO)(6)(HC+C-t-Bu)] are shown to be excellent precursors for CVD of pure cobalt films, when using hydrogen as carrier gas. These c ompounds all possess good air and moisture stability, have high volati lity, and are easy to prepare, store, and handle. Using these precurso rs and the known palladium and platinum precursors [Pd(hfac)(2)] and [ PtMe2(COD)], it has been shown that bilayer films glass/Co/Pd, glass/P d/Co, glass/Co/Pt, and glass/Pt/Co can be grown easily. There is a sha rp boundary and good adhesion between the two metal layers, suggesting that this method may be suitable for the formation of bilayer films f or magnetooptical applications.