DETERMINATION OF ABSORPTION-COEFFICIENTS AND IMPURITY SPECIES IN SEMICONDUCTORS FROM PHOTOCONDUCTIVITY SPECTRA

The formation of signals in the IR photoconductivity spectra of semico nductors with the simultaneous selective absorption of radiation by el ectrically and optically active impurities was studied. A method for d etermining absorption coefficients and impurities from these spectra o f test samples was proposed. It is shown that impurities typical of hi gh-purity silicon containing 10(12)-10(16) cm(-3) electrically active impurities, in particular, Group III and V elements, and optically act ive impurities in carbon and oxygen species can be determined by this method.