DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN SILICON-WAFERS BY A DUAL ELECTROLYTE CELL

The use of a cell with two electrolytic compartments for the determina tion of minority carrier diffusion length in silicon wafers is discuss ed. The method is based on comparison of the limiting photocurrents re corded at the front (illuminated) and back (dark) compartment under su itable polarization conditions. Results obtained in different polariza tion arrangements for n- and p-Si are compared and discussed. It is sh own that the diffusion length of holes in n-Si may be determined with good accuracy in the cell Pt1/1 M NH4F/silicon/1 M NH4F/Pt2 without ap plication of metal contacts to the Si wafer.