A METHODOLOGY FOR AUTOMATED QUANTITATIVE MICROSTRUCTURAL ANALYSIS OF TRANSMISSION ELECTRON-MICROGRAPHS

Citation
Dt. Carpenter et al., A METHODOLOGY FOR AUTOMATED QUANTITATIVE MICROSTRUCTURAL ANALYSIS OF TRANSMISSION ELECTRON-MICROGRAPHS, Journal of applied physics, 84(11), 1998, pp. 5843-5854
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
84
Issue
11
Year of publication
1998
Pages
5843 - 5854
Database
ISI
SICI code
0021-8979(1998)84:11<5843:AMFAQM>2.0.ZU;2-L
Abstract
It is generally recognized that proper quantification of microstructur al behavior is necessary for the optimization of materials properties. In the specific case of polycrystalline thin films, transmission elec tron microscopy (TEM) is required for microstructural interrogation du e to the small (nm-mu m) inherent length scales in these systems. Whil e a meaningful study requires large grain populations, typical data se ts are relatively small due to the need for human interpretation of th e contrast in TEM micrographs. To overcome this limitation, a general methodology has been developed to fully automate the grain boundary id entification procedure by using a combination of both conventional and newly developed image processing algorithms to extract and combine in formation from multiple, optimized TEM micrographs. This technique has been validated by systematically analyzing microstructures of thin Al films, as obtained from TEM micrographs, and comparing these results with those obtained by a conventional, manual approach. Indeed, a stat istical analysis shows that the agreement between these two methods is quite good. We further show that based upon a large population (8185 grains) one can estimate the number of grains required to draw meaning ful conclusions about this microstructure. While the emphasis of this work is on TEM image processing, the techniques developed here are exp ected to be sufficiently general and flexible so as to be applicable t o other (e.g., focused-ion beam) microscopies. (C) 1998 American Insti tute of Physics. [S0021-8979(98)02023-4]