P-TYPE CONDUCTIVITY CONTROL OF ZNSE WITH INSERTION OF ZNTE-LI SUBMONOLAYERS IN METALORGANIC MOLECULAR-BEAM EPITAXY

p-type ZnSe with periodic insertion of ZnTe: Li submonolayers was grow n by metalorganic molecular-beam epitaxy. The net acceptor concentrati on, N-A-N-D, up to 2 x 10(17)-5 x 10(18) cm(-3) was observed. However, under higher Li doping, reduction of the growth rate was observed and the growth direction of the islands on the surface changed from the [ 0 (1) over bar 1] to [011] direction. This resulted in samples not uni formly doped along the growth direction especially for higher Li dopin g. This reduction of the growth rate was attributed to the adsorption of Li to the B steps, and this phenomenon was suppressed by a periodic Zn purge to the growing surface. By this method, we could keep the gr owth rate constant and succeeded in obtaining samples which are doped uniformly along the growth direction for higher Li doping. N-A-N-D, up to 4.5 x10(17) cm(-3) was measured in this way. The photoluminescence peaks were blueshifted and discrete peaks were observed with increasi ng Li doping. This interesting behavior was explained with a ZnTe quan tum box model. (C) 1998 American Institute of Physics. [S0021-8979(98) 10623-0].