DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SYNTHETIC TYPE IIB DIAMOND

Authors
ZEISEL R NEBEL CE STUTZMANN M
Citation
R. Zeisel et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SYNTHETIC TYPE IIB DIAMOND, Journal of applied physics, 84(11), 1998, pp. 6105-6108
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
84
Issue
11
Year of publication
1998
Pages
6105 - 6108
Database
ISI
SICI code
0021-8979(1998)84:11<6105:DTSOST>2.0.ZU;2-7
Abstract
Deep level transient spectroscopy (DLTS) and optically excited DLTS ar e applied to investigate the defect distribution in IIb synthetic diam ond. Two defects at 0.83 and 1.25 eV above the valence band edge are d etected. Capacitance-voltage measurements reveal a boron doping densit y of 7 x 10(15) cm(-3) and a trap density at 0.83 eV of approximate to 10(15) cm(-3). The results are discussed in comparison with data avai lable in the literature. (C) 1998 American Institute of Physics. [S002 1-8979(98)03323-4].