THE DENSITY-OF-STATES IN SILICON NANOSTRUCTURES DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS

Citation
T. Matsumoto et al., THE DENSITY-OF-STATES IN SILICON NANOSTRUCTURES DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS, Journal of applied physics, 84(11), 1998, pp. 6157-6161
Citations number
30
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
84
Issue
11
Year of publication
1998
Pages
6157 - 6161
Database
ISI
SICI code
0021-8979(1998)84:11<6157:TDISND>2.0.ZU;2-#
Abstract
Space-charge-limited current (SCLC) flow was investigated as a functio n of applied potential and specimen thickness in nanocrystalline silic on films prepared by electrochemical anodization. From the analysis of the current-voltage (J-V) characteristics in the SCLC regime, the den sity of states distribution near the Fermi level was determined. The a greement between the experimental J-V characteristics and the theoreti cal curve strongly implies that the current flow is entirely controlle d by localized states situated at the quasi-Fermi level. (C) 1998 Amer ican Institute of Physics. [S0021-8979(98)10823-X].