T. Matsumoto et al., THE DENSITY-OF-STATES IN SILICON NANOSTRUCTURES DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS, Journal of applied physics, 84(11), 1998, pp. 6157-6161
Space-charge-limited current (SCLC) flow was investigated as a functio
n of applied potential and specimen thickness in nanocrystalline silic
on films prepared by electrochemical anodization. From the analysis of
the current-voltage (J-V) characteristics in the SCLC regime, the den
sity of states distribution near the Fermi level was determined. The a
greement between the experimental J-V characteristics and the theoreti
cal curve strongly implies that the current flow is entirely controlle
d by localized states situated at the quasi-Fermi level. (C) 1998 Amer
ican Institute of Physics. [S0021-8979(98)10823-X].