INFLUENCE OF DEFECTS ON ELECTRON-EMISSION FROM DIAMOND FILMS

The correlation between paramagnetic defects and the electron emission in diamond films, which were deposited by the chemical vapor depositi on method, has been studied using electron-spin-resonance (ESR) and fi eld-emission measurements. The paramagnetic defects, which are a carbo n dangling bond in the diamond layer (P-dia-center: g = 2.003, Delta H -pp = 3 Oe) and a carbon dangling bond in the nondiamond phase carbon region ( P-ac-center: g = 2.003, Delta H-pp = 8 Oe), exist in the diam ond films. Electron emission with high current density was observed fo r the diamond film, which contains high spin densities for both ESR ce nters, because electrons are efficiently transported to the diamond su rface through the defect-induced energy band(s) by hopping conduction. (C) 1998 American Institute of Physics. [S0021-8979(98)02723- 6].