CHARACTERIZATION OF SPUTTERED AMORPHOUS PLATINUM DIOXIDE FILMS

Amorphous platinum dioxide, a-PtO2, films are formed commonly during r eactive sputtering of platinum at relatively high power density levels and high oxygen partial pressures. The structure of a-PtO2 is interme diate between the crystalline alpha and beta phases of this compound a nd either phase may form upon annealing or by lowering the power densi ty during sputtering. Amorphous platinum dioxide is a semiconductor, a nd its resistivity depends on deposition parameters. Films of a-PtO2 a re dense, chemically resistant, smooth, reflective, and have a hardnes s similar to titanium nitride. The films may be reduced in hydrogen at room temperature or in carbon monoxide at 200 degrees C to produce me tallic platinum with crystallite sizes in the range of 5-10 nm. Any of these properties may be exploited to produce films that could be used in the development of sensors, optical materials, and in microelectro nics. (C) 1998 American Institute of Physics. [S0021-8979(98)03223-X].