Cg. Zhu et al., STUDY OF IRON OVERLAYER ON SULFUR PASSIVATED GAAS(100) BY SYNCHROTRON-RADIATION PHOTOEMISSION, Acta physica Sinica, 7(10), 1998, pp. 751-756
We have studied the interface electronic structures and the chemical r
eaction of the Fe overlayer deposited on S-passivated GaAs(100). The c
hemical bond and electronic structure are different from Fe/GaAs, and
the reaction between As and Fe is weakened by S atoms. This is benefic
ial to the magnetism in the interface. In the first stage of depositio
n, Fe clusters is form near S atoms due to the large electronegativity
of S. The S atoms remain at the interface with Fe coverage. Magnetic
ordering feature is found at a coverage higher than 0.6 nm. According
to the large exchange splitting in valence band spectra, we suggest th
at Fe phase transition from bcc to fcc occurs with increasing coverage
.