IMPACT IONIZATION OF EXCITONS BY HOT CARRIERS IN QUANTUM-WELLS

Citation
A. Dargys et J. Kundrotas, IMPACT IONIZATION OF EXCITONS BY HOT CARRIERS IN QUANTUM-WELLS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1258-1261
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
11
Year of publication
1998
Pages
1258 - 1261
Database
ISI
SICI code
0268-1242(1998)13:11<1258:IIOEBH>2.0.ZU;2-5
Abstract
Dissociation of free excitons into electrons and holes, due to collisi ons between the excitons and charge carriers accelerated by an in-plan e electric field in a multiple quantum well structure, is considered. We found that at normally used 2D excitonic concentrations the impact ionization process is rather strong and dominates over the exciton for mation process at electric fields of the order of a few hundred V cm(- 1).