THE INVESTIGATION OF THE ANNEALING EFFECT ON HYDROGENATED AMORPHOUS-SILICON PIN DIODES BY CAPACITANCE TECHNIQUES

Authors
SERIN T
Citation
T. Serin, THE INVESTIGATION OF THE ANNEALING EFFECT ON HYDROGENATED AMORPHOUS-SILICON PIN DIODES BY CAPACITANCE TECHNIQUES, Semiconductor science and technology (Print), 13(11), 1998, pp. 1272-1276
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology (Print) → ACNP
ISSN journal
02681242
Volume
13
Issue
11
Year of publication
1998
Pages
1272 - 1276
Database
ISI
SICI code
0268-1242(1998)13:11<1272:TIOTAE>2.0.ZU;2-X
Abstract
In this study the reverse-bias annealing effect on the density of stat es(DOS) in hydrogenated amorphous silicon pin diodes was investigated. In order to find the effect of reverse-bias thermal annealing on the DOS around the midgap of the i-region in a pin structure of (p(+)-type )/a-Si:H(intrinsic)/a-Si-H(n(+)-type)/Al the junction capacitance was measured for annealing temperatures of 23-175 degrees C and the DOS ar ound the midgap of the i-region was determined by three different capa citance techniques. The results are tabulated.