PERSISTENT PHOTOCONDUCTIVITY IN SILICON-WAFERS

Authors
HADDAB Y POPOVIC RS
Citation
Y. Haddab et Rs. Popovic, PERSISTENT PHOTOCONDUCTIVITY IN SILICON-WAFERS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1294-1297
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology (Print) → ACNP
ISSN journal
02681242
Volume
13
Issue
11
Year of publication
1998
Pages
1294 - 1297
Database
ISI
SICI code
0268-1242(1998)13:11<1294:PPIS>2.0.ZU;2-W
Abstract
Persistent photoconductivity effect in silicon wafers was observed usi ng specifically designed test structures. Persistent changes in conduc tivity can reach 0.01% in wafers with a doping level of 2 x 10(14) cm( -3). The recovery time constant is in the range 10-30 min at room temp erature. Oxygen-rich-Czochralski-grown wafers were compared with oxyge n-poor float-zone-grown ones. The persistent photoconductivity is much higher in the Czochralski wafers. This indicates that this effect is most probably related to oxygen in silicon. To the best of our knowled ge, such an effect has never been observed before in silicon crystals.