DC ELECTRICAL-CONDUCTIVITY IN GEXSB40-XS60 GLASSES AND THIN-FILMS

Authors
PAMUKCHIEVA V LEVI Z SAVOVA E
Citation
V. Pamukchieva et al., DC ELECTRICAL-CONDUCTIVITY IN GEXSB40-XS60 GLASSES AND THIN-FILMS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1309-1312
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology (Print) → ACNP
ISSN journal
02681242
Volume
13
Issue
11
Year of publication
1998
Pages
1309 - 1312
Database
ISI
SICI code
0268-1242(1998)13:11<1309:DEIGGA>2.0.ZU;2-E
Abstract
DC electrical conductivity for bulk and thin-film samples of the GexSb 40-xS60 chalcogenide glass system was measured in the temperature rang e 293-430 K. The activation energy Delta E and the pre-exponential fac tor delta(0) have been determined. Values of delta(0) suggest differen t mechanisms of conductivity in bulk glasses and in thin films. For ai l compositional dependences a peculiarity was observed in the region w ith an average coordination number Z similar to 2.67 which can be asso ciated with a topological phase transition from a 2D to a 3D structure .