A 2-TERMINAL NANOCRYSTALLINE SILICON MEMORY DEVICE AT ROOM-TEMPERATURE

Authors
KAMAL AHM LUTZEN J SANBORN BA SIDOROV MV KOZICKI MN SMITH DJ FERRY DK
Citation
Ahm. Kamal et al., A 2-TERMINAL NANOCRYSTALLINE SILICON MEMORY DEVICE AT ROOM-TEMPERATURE, Semiconductor science and technology (Print), 13(11), 1998, pp. 1328-1332
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology (Print) → ACNP
ISSN journal
02681242
Volume
13
Issue
11
Year of publication
1998
Pages
1328 - 1332
Database
ISI
SICI code
0268-1242(1998)13:11<1328:A2NSMD>2.0.ZU;2-T
Abstract
We describe the fabrication and operation of a polysilicon room-temper ature memory device. The source-drain current-voltage (I-V) characteri stics of this device, with floating gate, demonstrate periodic current steps as well as hysteresis generic for a memory device. Electron mic rographs show that the channel consists of 35 nm silicon grains. A mod el of single charge trapping controlled conduction through the device channel is suggested.