We have developed a compact closed-form solution of the band transport
model for high-contrast gratings in photogalvanic crystals. Our solut
ion predicts the effect of the photoconductivity and the electric fiel
d grating enhancement due to the photogalvanic effect. We predict a pr
onounced dependence of the steady-state photogalvanic current on the c
ontrast of the interference pattern and an increase of holographic sto
rage time due to the enhancement of the photoconductivity grating cont
rast. In the high contrast Limit and a large photogalvanic effect the
refractive index grating will be shifted from the position of the inte
nsity modulation pattern, contrary to the usually adopted model of uns
hifted gratings. [S1050-2947(98)03610-5].