STABLE AMORPHOUS-SILICON THIN-FILM TRANSISTORS

Hydrogenated amorphous silicon, a-Si:H, prepared with the hot-wire che mical vapour deposition technique is incorporated in thin-him transist ors (TFTs). High-quality TFTs are fabricated with this type of a-Si:H, which we deposited at a rate of 17 Angstrom/s. TFTs with a current sw itching ratio of 5 x 10(5), a threshold voltage of 6.3 V, and an elect ron field-effect mobility in the saturation regime of 0.6 cm(2)/V s ar e obtained. These TFTs do not show any threshold voltage shift upon pr olonged gate voltage application, in contrast to conventional a-Si:H T FTs. This has been achieved by optimizing the electronic properties of the hot-win layer, and by optimizing the interface between the gate d ielectric and the hot-win layer. (C) 1997 American Institute of Physic s.