CORRELATION BETWEEN DIELECTRIC-BREAKDOWN AND CHARGE GENERATION IN SILICON-OXIDE FILMS

To clarify the correlation between breakdown characteristics and charg e generation under high field electrical stress, we have separated the contributions of the charges generated in the oxide bulk and near the Si/SiO2 interface to oxide breakdown. It is found that the density of positive charges generated near the cathode interface increases monot onically with stress time, and that it was independent of stress condi tions immediately before breakdown. No correlation between charge gene ration in the oxide bulk and oxide breakdown has been observed. These results are new experimental evidences which support the model showing that positive charges generated near the cathode interface are respon sible for oxide breakdown. (C) 1997 American Institute of Physics.