POSITRON-ANNIHILATION IN ZNSE LAYERS GROWN ON GAAS - ZINC VACANCIES AND DRIFT IN THE ELECTRIC-FIELD AT THE ZNSE GAAS INTERFACE/

Authors
LISZKAY L CORBEL C HAUTOJARVI P AULOMBARD R CLOITRE T GRIESCHE J KIESSLING F
Citation
L. Liszkay et al., POSITRON-ANNIHILATION IN ZNSE LAYERS GROWN ON GAAS - ZINC VACANCIES AND DRIFT IN THE ELECTRIC-FIELD AT THE ZNSE GAAS INTERFACE/, Applied physics letters, 70(20), 1997, pp. 2723-2725
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
20
Year of publication
1997
Pages
2723 - 2725
Database
ISI
SICI code
0003-6951(1997)70:20<2723:PIZLGO>2.0.ZU;2-D
Abstract
We used a slow positron beam to investigate the depth dependence of th e positron-electron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lat tice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is al so demonstrated that positrons in semi-insulating ZnSe are drifted to GaAs by fields of 1-3 kV/cm. (C) 1997 American Institute of Physics.