CuO/SnO2 heterostructures as well as SnO2(CuO) polycrystalline films h
ave been studied for H2S sensing. Gas sensing properties of these mate
rials have been compared in conditions: 25-300 ppm H2S in N-2 at 100-2
50 degrees C. A shorter response time of the heterostructures as compa
red to that of the SnO2(CuO) films has been found. It is suggested tha
t the improvement of dynamic sensor properties of SnO2/CuO heterostruc
tures is caused by the localization of electrical barrier between CuO
and SnO2 layers. (C) 1998 Elsevier Science S.A. All rights reserved.