SI-SIGE MODFET CURRENT MIRROR

Measurements of the DC characteristics of a negative inverting, voltag e-following current mirror are presented. The circuit design uses prot otype n-depletion mode, modulation doped field effect transistors empl oying Si:SiGe heterojunction technology and is based on recently estab lished circuit design techniques for GaAs MESFET technology. The resul ts show a quasi-linear response with gate voltage swings (V-gs) of +/- 0.5 V. Increases in the achievable range of V-gs are anticipated throu gh changes in material growth and device processing, and also through enhancement of the circuit design.