RT PULSED OPERATION OF METAMORPHIC VCSEL AT 1.55-MU-M

An all molecular beam epitaxy grown 1.55 mu m vertical cavity surface- emitting laser is presented which comprises an InP/InGaAsP bottom mirr or, multiple quantum well active layer and a GaAlAs/GaAs metamorphic t op mirror directly grown on the InP cavity. This structure takes advan tage of the intrinsic optical, electrical and thermal properties of Ga AlAs/GaAs material and is compatible with a 2 in process. Such an appr oach will therefore lead to a drastic reduction in the cost of optical sources and offer the possibility of a massive development of the opt ical network.