ACCURATE CLOSED-FORM EXPRESSION FOR SHEET CARRIER DENSITY CALCULATIONS IN MODULATION-DOPED HETEROSTRUCTURES

Authors
CASTRO F NABET B CULP J
Citation
F. Castro et al., ACCURATE CLOSED-FORM EXPRESSION FOR SHEET CARRIER DENSITY CALCULATIONS IN MODULATION-DOPED HETEROSTRUCTURES, Electronics Letters, 34(22), 1998, pp. 2170-2171
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
22
Year of publication
1998
Pages
2170 - 2171
Database
ISI
SICI code
0013-5194(1998)34:22<2170:ACEFSC>2.0.ZU;2-N
Abstract
An accurate expression for sheet carrier density (n(s)) calculations i n modulation-doped heterostructures is developed from a nonlinear mode l of the Fermi potential variation with n(s). This closed-form express ion produces numerical results that agree well with computer simulatio ns of low sheet carrier density AlGaAs/GaAs heterostructures at 300 K.