SCALING OF MAXIMUM CAPACITANCE OF MOSFET WITH ULTRA-THIN OXIDE

Authors
VERSARI R RICCO B
Citation
R. Versari et B. Ricco, SCALING OF MAXIMUM CAPACITANCE OF MOSFET WITH ULTRA-THIN OXIDE, Electronics Letters, 34(22), 1998, pp. 2175-2176
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
22
Year of publication
1998
Pages
2175 - 2176
Database
ISI
SICI code
0013-5194(1998)34:22<2175:SOMCOM>2.0.ZU;2-D
Abstract
The maximum capacitance of a polysilicon-gate MOSFET against oxide thi ckness is studied for different gate and substrate doping levels. It i s found that substrate doping contributes to transistor capacitance de gradation, imposing a limit on the lower voltage operation for sub-0.1 mu m CMOS technologies.