I derive a general method for accelerating the molecular-dynamics (MD)
simulation of infrequent events in solids. A bias potential (Delta V-
b) raises the energy in regions other than the transition states b bet
ween potential basins. Transitions occur at an accelerated rate and th
e elapsed time becomes a statistical property of the system. Delta V-b
can be constructed without knowing the location of the transition sta
tes and implementation requires only first derivatives. I examine the
diffusion mechanisms of a 10-atom Ag cluster on the Ag(111) surface us
ing a 220 mu s hyper-MD simulation.