MORPHOLOGY CONTROL OF CU CLUSTERS FORMED ON H-SI(111) SURFACE IN SOLUTION BY SI POTENTIAL

We have controlled the morphology of Cu clusters formed on H-terminate d Si(lll) surface in solution by controlling Si potential. At a Si pot ential of -0.70 eV vs SHE, Cu wires of 50 nm width were formed along a ridge composed of dihydride Si atoms at the intersections of steps eq uivalent to [11 (2) over bar]. In contrast, no Cu morphology was obser ved along a ravine composed of monohydride Si atoms.