SELECTIVE-AREA GROWTH OF GAN ON SI SUBSTRATE USING SIO2 MASK BY METALORGANIC VAPOR-PHASE EPITAXY

Selective area growth (SAG) of GaN on (111) Si substrate was studied u sing AlGaN as an intermediate layer. A hexagonal dot with a (0001) pla ne on the top and of a 5 mu m or a submicron size was obtained using a patterned dot structure of silicon dioxide (SiO2) mask. The facet str ucture revealed that the < 1120 > axis of hexagonal GaN is parallel to the < 110 > axis of the Si substrate. The cathodoluminescence (CL) sp ectrum at 133 K exhibited a strong near-band-edge emission hand for th e submicron dots, which suggests excellent crystallinity. Epitaxial la teral overgrowth (ELO) of GaN on the Si substrate is demonstrated.