BAND DIAGRAM OF METAL-INSULATOR-MAGNETIC SEMICONDUCTOR (LA0.85SR0.15MNO3) STRUCTURE AT ROOM-TEMPERATURE

We investigated electrical properties of a La0.85Sr0.15MnO3 magnetic s emiconductor through observation of photoinduced current and electron- beam-induced current (EBIC) across the Al/(100)SrTiO3/(100)La0.85Sr0.1 5MnO3 metal-insulator-semiconductor (MIS) structure at room temperatur e. The test specimens were prepared by the Ar-F excimer laser ablation technique. According to the current flowing direction, it was observe d that the La0.85Sr0.15MnO3 band bends downward at and near the interf ace. Furthermore, from determination of the flat-band condition, the w ork function of (100)La0.85Sr0.15MnO3 epitaxial film was estimated to be similar to 4.8 eV.