We report the electroluminescent (EL) characteristics of a new class o
f polymeric material, polysilanes, which were employed in Light-emitti
ng diodes (LEDs) as an emissive material. In contrast to the LEDs util
izing pi-conjugated polymers and small molecules that have been report
ed to date, LEDs made from polysilanes exhibit EL in the near-ultravio
let (NUV) or ultraviolet (NUV) region due to their sigma-conjugation.
Three types of polysilanes, dialkyl, monoalkyl-aryl and diaryl polysil
anes, have been used as the emissive material, together with an indium
tin-oxide (ITO) and metal electrode for the injection of holes and ele
ctrons, respectively. The LED characteristics were observed to depend
strongly on the chemical, optical and electronic properties of the emi
ssive polysilanes. The development of emissive polysilanes has led to
the successful fabrication of single-layer LEDs which emit NUV light a
t 107 nm (3.05 eV) with a quantum efficiency of 0.1% photons/electron
at room temperature. (C) 1998 Elsevier Science S,A. An rights; reserve
d.